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H5N2522FN
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1573-0210 Rev.2.10 May 08, 2007
Features
* Low on-resistance * Low leakage current * High speed switching
Outline
RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN)
D
G
1. Gate 2. Drain 3. Source
1
23
S
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to Source voltage Gate to source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C 3. STch = 25C, Tch 150C Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 IAPNote3 EARNote3 Pch Note2 ch-c Tch Tstg Ratings 250 30 12 48 12 48 12 9 35 3.57 150 -55 to +150 Unit V V A A A A A mJ W C/W C C
REJ03G1573-0210 Rev.2.10 May 08, 2007 Page 1 of 6
H5N2522FN
Electrical Characteristics
(Ta = 25C)
Item Drain to Source breakdown voltage Zero Gate voltage drain current Gate to Source leak current Gate to Source cutoff voltage Static Drain to Source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-Drain diode forward voltage Body-Drain diode reverse recovery time Notes: 4. Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on) Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 250 -- -- 1.5 -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 0.13 1300 185 62 24 57 190 69 0.89 93 Max -- 10 0.1 4.0 0.17 -- -- -- -- -- -- -- 1.35 -- Unit V A A V pF pF pF ns ns ns ns V ns Test conditions ID = 10 mA, VGS = 0 VDS = 250 V, VGS = 0 VGS = 30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 6 A, VGS = 10 V VDS = 25 V VGS = 0 f = 1 MHz ID = 6 A VGS = 10 V RL = 20 Rg = 10 IF = 12 A, VGS = 0 IF = 12 A, VGS = 0 diF/dt = 100 A/s
REJ03G1573-0210 Rev.2.10 May 08, 2007 Page 2 of 6
H5N2522FN
Main Characteristics
Power vs. Temperature Derating
50 1000 Ta = 25C 300
Maximum Safe Operation Area
Channel Dissipation Pch (W)
Drain Current ID (A)
40
100 30 10 3 1 0.3
DC Operation (Tc = 25C)
1 m
10
10
s
s
0
30
s
20
10
0
50
100
150
200
0.1 Operation in this 0.03 area is limited by RDS(on) 0.01 0.1 0.3 1 3
PW = 10 ms (1shot)
10 30 100 300 1000
Case Temperature Tc (C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
50 50
Pulse Test 15 V 10 V 20 V 8V 6V
Typical Transfer Characteristics
VDS = 10 V Pulse Test
Drain Current ID (A)
Drain Current ID (A)
40
40
30
5.5 V
30
20
5V
20 Tc = 75C 25C -25C 0 2 4 6 8 10
10
4.5 V
10
VGS = 4 V
0
4
8
12
16
20
Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage
Drain to Source on State Resistance RDS(on) () Drain to Source Saturation Voltage VDS(on) (V)
5 Pulse Test 4
Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current
1 0.5 VGS = 10 V
3
0.2 0.1 0.05
2
ID = 12 A 6A 3A
1
0.02 0.01 0.1 Pulse Test 0.3 1 3 10 30 100
0
4
8
12
16
20
Gate to Source Voltage VGS (V)
Drain Current ID (A)
REJ03G1573-0210 Rev.2.10 May 08, 2007 Page 3 of 6
H5N2522FN
Static Drain to Source on State Resistance vs. Temperature
0.5 Pulse Test
Static Drain to Source on State Resistance RDS(on) ()
Body-Drain Diode Reverse Recovery Time
1000
Reverse Recovery Time trr (ns)
VGS = 10 V
500 200 100 50 20 10 5 2 1 0.1 0.3 1.0 di / dt = 100 A / s VGS = 0, Ta = 25C 3 10 30 100
0.4 ID = 3 A 0.3 1.5 A
0.2 1A 0.1 0 -25
0
25
50
75
100 125 150
Case Temperature
Tc (C)
Reverse Drain Current IDR (A)
Typical Capacitance vs. Drain to Source Voltage
10000 10000
Switching Characteristics
VGS = 10 V, VDD = 125 V PW = 5 s, duty 1 % RG = 10
Ciss 1000 300 100 30 10 VGS = 0 f = 1 MHz 0 20 40 60 80 100 Coss Crss
Switching Time t (ns)
Capacitance C (pF)
3000
1000 tf td(off) tr tf td(off) tr 10 0.1 td(on)
100
0.3
1
3
10
30
100
Drain to Source Voltage VDS (V)
Drain Current ID (A)
Reverse Drain Current vs. Source to Drain Voltage
50 5
Gate to Source Cutoff Voltage vs. Case Temperature
VDS = 10 V 4 ID = 10 mA 3 1 mA
Reverse Drain Current IDR (A)
40
30
Gate to Source Cutoff Voltage VGS(off) (V)
Pulse Test
20 10 V 10 5V VGS = 0 V, -5 V 0.8 1.2 1.6 2.0
2 0.1 mA
1 0 -25
0
0.4
0
25
50
75
100 125 150
Source to Drain Voltage VSD (V)
Case Temperature Tc (C)
REJ03G1573-0210 Rev.2.10 May 08, 2007 Page 4 of 6
H5N2522FN
Normalized Transient Thermal Impedance s (t)
Normalized Transient Thermal Impedance vs. Pulse Width
10
Tc = 25C
1
D=1 0.5
0.2
0.1
0.1
0.05 0.02
1 e 0.0 puls ot sh 1
ch - c (t) = s (t) * ch - c ch - c = 3.57C/W, Tc = 25C PDM PW T
0.01
D=
PW T
0.001 10
100
1m
10 m
100 m
1
10
100
Pulse Width PW (S) Switching Time Test Circuit
Vin Monitor D.U.T. RL 10 Vin 10 V VDD = 120V 90% 90% td(off) tf Vin Vout 10% 10% 10% Vout Monitor
Waveform
90%
td(on)
tr
REJ03G1573-0210 Rev.2.10 May 08, 2007 Page 5 of 6
H5N2522FN
Package Dimensions
Package Name TO-220FN JEITA Package Code RENESAS Code PRSS0003AB-A Previous Code MASS[Typ.] 2.0g
Unit: mm
10 0.3
2.8 0.2
15 0.3
3.2 0.2
14 0.5
3.6 0.3
1.1 0.2 1.1 0.2 0.75 0.15 0.75 0.15
2.54 0.25
2.54 0.25
Ordering Information
Part No. H5N2522FN-E-T2 Quantity 50 pcs Plastic magazine Shipping Container
REJ03G1573-0210 Rev.2.10 May 08, 2007 Page 6 of 6
2.6 0.2
4.5 0.2
6.5 0.3
3 0.3
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